Overview
Ion-Beam etching is a versatile process for pattern delineation and material modification.
The low pressure, line-of-sight nature of beam techniques provides a flexibility of
directional bombardment not available in other plasma processes. The ability to etch
virtually any material by the sputtering process opens a wide variety of diverse
applications.
Features
≻ High selectivity, uniform plasma
≻ Simple configuration makes maintenance easy
≻ The physical and chemical etching systems are controlled independently
≻ Low damage & contamination
≻ Physical etching using Ar Ion-Beam distributes reactive gases such as Cl2, He, BCl3 evenly around substrate.
Specifications
ITEM | SPECIFICATIONS |
System configuration | R&D |
Substrate size | 2” - 6” (50.8mm - 150mm) |
Operating pressure (Torr) | > 1.0E-4 Torr |
Uniformity within substrate / substrate to substrate surfaces | ± 5% max. |
Ion source | 3cm ~ 20scm (@1” ~ 8”) |
Substrate | Tilt / Rotation / Cooling |
Ultimate Pressure | 1.0E-6Torr |
