Overview
Rapid Thermal Processing (RTP) refer to a semiconductor manufacturing process which
instantly heats silicon wafer to high temperatures (up to 1100℃ / 2012℉) under
different atmospheric conditions such as oxygen or nitrogen.
The Korea Vacuum Tech, Ltd. RTP System offers the highest Rapid Thermal Annealing
(RTA) performance for a wide range of application with a low cost of ownership.
Designed to meet the most stringent requirements of today’s semiconductor
technologies and beyond, the RTP Module provides complete temperature control
necessary for advanced semiconductor manufacturing applications.
The Korea Vacuum Tech, Ltd. RTP system utilizes and array of unique technical feature
which provide optimal uniformity, repeatability and precision previously unachievable in
semiconductor manufacturing.
Features
≻ High-power Quartz Lamps
Wafers are heated by an array of high-power quartz lamps.
≻ Rapid Heating
The maximum heating rate of the wafer is 100℃/ sec (212℉/sec).
≻ Digital display shows both the actual wafer temperature as well as the desired pre-set temperature
PID constants can be easily set by the standard equipment auto-tuning function.
≻ Variable Pressure Range
Pressure ranges from high vacuum to ambient atmospheres with oxygen or nitrogen can be utilized.
≻ Compatible with various gases (Ar, H2, O2, N2)
Applications
≻ Silicide to Si process
≻ Annealing after ion implantation: sheet resistance
≻ LED process such as GaN
Specifications
ITEM | SPECIFICATION |
Substrate size | 2” wafer |
Substrate holder | 2.5” SiC |
Heating elements | Quartz Lamp |
Chamber Material | Water or air cooled Al or SUS304 chamber with quartz window |
Pumping system: | Rotary pump |
Gas control: | Mass Flow Meter or MFC |
