Overview
Reactive ion Etching (RIE) is an etching technology that utilizes chemically reactive
plasma to remove masked materials deposited on wafers during microfabrication. The
combination of an electromagnetic field in a low pressure (vacuum) environment is
used to create a plasma source from which high energy ions attack a wafer surface and react.
Features
≻ High selectivity, uniform plasma etching
≻ Simple configuration makes maintenance easy
≻ Negative self-bias forms on lower electrode
≻ Low damage & contamination
Specifications
ITEM | SPECIFICATIONS |
System configuration | R&D |
Substrate size | 2” - 6” (50.8mm - 150mm) |
Operating pressure (Torr) | < 30mTorr |
Uniformity within substrate / substrate to substrate surfaces | ± 5% max. |
Process Chamber | Al anodized Chamber |
Substrate | Heating or cooling / Bias |
Ultimate Pressure | 1.0E-6Torr |
Gas Nozzle | 6” - 8” shower head type |
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Overview
Reactive ion Etching (RIE) is an etching technology that utilizes chemically reactive
plasma to remove masked materials deposited on wafers during microfabrication. The
combination of an electromagnetic field in a low pressure (vacuum) environment is
used to create a plasma source from which high energy ions attack a wafer surface and react.
Features
≻ High selectivity, uniform plasma etching
≻ Simple configuration makes maintenance easy
≻ Negative self-bias forms on lower electrode
≻ Low damage & contamination
Specifications
ITEM | SPECIFICATIONS |
System configuration | R&D |
Substrate size | 2” - 6” (50.8mm - 150mm) |
Operating pressure (Torr) | < 30mTorr |
Uniformity within substrate / substrate to substrate surfaces | ± 5% max. |
Process Chamber | Al anodized Chamber |
Substrate | Heating or cooling / Bias |
Ultimate Pressure | 1.0E-6Torr |
Gas Nozzle | 6” - 8” shower head type |
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