Overview
Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to
our product line, the ALD system.
ALD has the such advantages over other conventional deposition methods as excellent
uniform thickness, low processing temperature, and precise film thickness control.
ICP plasma enhanced atomic layer deposition has many advantages, such
as the wide process window, high film density, low impurity contents, and broad choice
of precursor chemistry and/or reactants compared to the conventional ALD and metal
organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and
developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,
KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with
excellent uniformity.
Specifications (CCP type)
ITEM | Specifications |
Chamber | Process & Loadlock Chamber |
Substrate size | Piece to 6 inches |
Substrate Heating | Temperature range: up to 752°F (400°F) Temperature Uniformity: ±41°F (±5°C) |
Base Pressure & Operation Pressure | Less than 1.0E-3 Torr: Rotary or Dry pump Less than 1.0E-6 Torr: Turbo Molecular Pump (Option) Process < 10 Torr: Rotary or Dry pump |
Plasma Source | CCP Type: RF Power: 300W |
Gas Nozzle | 2 channel |
Precursors | Up to 2, Temperature: 250°C (Jacket) |
Mass flow controller | Precusor: Ar(Bubbling) / Purge: Ar or N2 Reactant(Plasma): O2, NH3, H2, etc.. |
Auto Pressure Controller | Throttle valve & Baratron Sensor |
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