Overview
An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is
supplied by electrical currents produced by electromagnetic induction; that is, by time-
varying magnetic fields. In its simplest form, an inductively coupled plasma consists of a
vacuum vessel, into which the gas to be ionized is administered, and an induction coil,
driven by a source of RF power. The coil is generally separated from the vacuum region
by a dielectric window. The wide range of applications for RF-driven, inductively
coupled plasma sources has recently expanded into processing tools for coating or
etching systems in the microelectronics industry.
Specifications
ITEM | SPECIFICATIONS |
System configuration | R&D |
Substrate size | 2” - 6” (50.8mm - 150mm) |
Etch Uniformity | 1.06±% within 3” wafer |
Etch rate | 1.16µm/min |
Process Chamber | Al anodized Chamber |
Substrate | He backside cooling / Bias / Chiller (-20℃ ~ 50℃) |
Source | ICP source with plasma spiral coil |
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