Overview
Sputter deposition is a technique used to deposit thin films of a material onto a surface
(substrate). Atoms and ions of a given material are made to collide. The resulting
momentum exchange disperses incident ions which further perpetuate activity setting
off collision cascades in the target. This activity drives the sputtering process. When
such cascades recoil and reach the target surface with an energy above the surface
binding energy, and atom can be ejected. If the target is thin on an atomic scale the
collision cascade can reach the back side of the target and atoms can escape the
surface binding energy in transmission. The average number of atoms ejected from the
target per incident ion is called the “sputter yield” and depends on the ion incident
angle, the energy of the ion, the masses of the ion and target atoms, and the surface
binding energy of atoms in the target.
Features
≻ Excellent Thickness Uniformity
The KVS Series RF&DC Sputtering System provide excellent thickness uniformity of resultant
films even for substrates that have the same diameter as the sputtering cathode assembly
≻ Always maintain high vacuum degree in process
These systems have a process chamber and a loadlock chamber. Loadlock chamber is used
for sample loading. So process chamber is always maintained high vacuum state
≻ Semi-auto system control by PLC
Specifications
ITEM | SPECIFICATIONS |
Process Chamber | Stainless steel |
Vacuum Pumping Station | Turbo molecular pump |
Loadlock Chamber | Stainless steel |
Substrate Heating Unit | SiC / 2”, 3”, 4”, 6”, 8” |
Sample Loading/Unloading Unit | Semi-auto / Manual |
Pressure Control Unit | Auto / Semi-auto / Manual |
Vacuum Gauge Controller | ATM ~ 1.0E-10Torr |
Gas Supply Unit | MFC (Ar, O2, N2, H2, etc..) |
Power Supply Unit | RF / DC / Pulsed DC |
Target Size | 2”, 3”, 4”, 6” |
Film Thickness Uniformity | Less than ±5% |
Ultimate Pressure | Less than 5.0E-7Torr |
Overview
Sputter deposition is a technique used to deposit thin films of a material onto a surface
(substrate). Atoms and ions of a given material are made to collide. The resulting
momentum exchange disperses incident ions which further perpetuate activity setting
off collision cascades in the target. This activity drives the sputtering process. When
such cascades recoil and reach the target surface with an energy above the surface
binding energy, and atom can be ejected. If the target is thin on an atomic scale the
collision cascade can reach the back side of the target and atoms can escape the
surface binding energy in transmission. The average number of atoms ejected from the
target per incident ion is called the “sputter yield” and depends on the ion incident
angle, the energy of the ion, the masses of the ion and target atoms, and the surface
binding energy of atoms in the target.
Features
≻ Excellent Thickness Uniformity
The KVS Series RF&DC Sputtering System provide excellent thickness uniformity of resultant films even for substrates
that have the same diameter as the sputtering cathode assembly
≻ No loadlock chamber
≻ Semi-auto system control by PLC
Specifications
ITEM | SPECIFICATIONS |
Process Chamber | Stainless steel |
Vacuum Pumping Station | Turbo molecular pump |
Loadlock Chamber | N/A |
Substrate Heating Unit | SiC / 2”, 3”, 4”, 6”, 8” |
Sample Loading/Unloading Unit | N/A |
Pressure Control Unit | Auto / Semi-auto / Manual |
Vacuum Gauge Controller | ATM ~ 1.0E-10Torr |
Gas Supply Unit | MFC (Ar, O2, N2, H2, etc..) |
Power Supply Unit | RF / DC / Pulsed DC |
Target Size | 2”, 3”, 4”, 6” |
Film Thickness Uniformity | Less than ±5% |
Ultimate Pressure | Less than 5.0E-7Torr |