UHV CVD

Ultra High Vacuum Chemical Vapor Deposition

•World’s First and Best Technology
•The world’s highest market share

[KEY BENEFITS]

- Provide ultra clean deposition environment by minimizing oxygen and vapor partial pressure
- Unique low temperature (< 550℃) plasma substrate cleaning
- New concept room temperature plasma substrate cleaning
- Low temperature-selective epitaxial growth

[KEY APPLICATIONS]

- Si SEG 
- SiGe, SiC 
- a-Si, Poly Si
- OEC(Oxide Elimination Chamber)