LED GaN MO CVD / SiC EPI
Metal Organic CVD for Gallium Nitride and Related Materials
•World’s highest productivity – Large batch size ( 2”x102, 4”x28 )
•Excellent Temperature uniformity
•Excellent Gas flow uniformity
[KEY BENEFITS]
- New concept temperature uniformity adjustment
- Unique gas distribution
- Low CoO
[KEY APPLICATIONS]
- LED(GaN on Sapphire / GaN on Si)
- Power Device(GaN , SiC)
* LED : Light Emitting Diode