TSD CVD
Time Space Divided Chemical Vapor Deposition
•World’s First and Best Technology
•Enable ultra-fine process through time and space split
[KEY BENEFITS]
- Enable simultaneous space and time split for the first time in the world
- Form dense film with zero plasma damage through space and time split
- Applicable to various processes including CVD and ALD, Nitridation, Oxidation, and Doping
- Excellent film quality, and wide process window
[KEY APPLICATIONS]
- High-K
- Metal
- SiO / SiOC / SiON
- SiN / SiBN
- Oxidation
- Nitridation